With the rapid advancement of new energy vehicles, 5G communications, data centers, higher requirements are put forward for the performance of semiconductor devices, such as power density, high temperature and high voltage resistance.  Third-generation semiconductors, represented by silicon carbide (SiC) and gallium nitride (GaN), have emerged as critical drivers for industrial upgrading, leveraging their inherent advantages of wide bandgap and high breakdown electric field. However, the manufacturing of third-generation semiconductors imposes rigorous requirements on the precision and stability of equipment and components, with the technological proficiency of such equipment and components directly constraining the industry's development trajectory.

The The Third-Generation Semiconductor Equipment & Core Components Industrial Chain Cooperation Forum convenes industry experts, corporate representatives, and researchers to focus on core technology breakthroughs in third-generation semiconductor equipment and the domestic substitution paths of components.. Discussions will also cover material innovations for precision parts and process optimization solutions. Furthermore, the forum will facilitate dialogue on key issues such as enhancing equipment reliability and fostering collaborative development across the supply chain. The ultimate goal is to accelerate technological advancements, strengthen the industrial ecosystem, and drive the innovation and industrialization of third-generation semiconductor equipment and components.