Key materials represented by silicon carbide (SiC) and gallium nitride (GaN) directly influence the reliability and application efficiency of semiconductor devices with their performance characteristics. However, third-generation semiconductor materials currently face challenges such as slow growth rates, high defect density, and complex preparation processes, accompanied by issues like poor epitaxial layer uniformity and difficult doping control. These constraints hinder the industrial scale-up, necessitating urgent technological innovation to break through such bottlenecks.

The The Third-Generation Semiconductor Key Materials & Fabrication Process Collaborative Innovation Forum has invited top industry experts, research scholars, and corporate technical leaders to conduct in-depth discussions on core topics such as crystal growth, epitaxial preparation, and doping processes of third-generation semiconductor materials. During the forum, cutting-edge achievements in large-size high-quality substrate preparation and advanced epitaxy technology will be shared, process optimization paths will be analyzed, and joint exploration will be carried out on solutions for improving material performance and reducing costs. The forum aims to accelerate the transformation of technological achievements, promote the innovative development of key materials and preparation processes for third-generation semiconductors, and help the industry reach new heights.