As a key component for power conversion and control in electrical equipment, power semiconductor devices are currently experiencing a golden era of vigorous development. Their application scope is extremely broad, ranging from IGBTs (Insulated Gate Bipolar Transistors) serving as the core of electric control systems and DC charging piles in new energy vehicles—accounting for 10% of vehicle costs and 20% of charging pile costs—to the same devices acting as the core of inverters in photovoltaic and energy storage fields. They are also found in power control for rail transit and efficient power transmission in smart grids, demonstrating their pervasive presence across industries. It is estimated that the global power semiconductor market size will exceed 35.68 billion US dollars in 2024,and is expected to reach 43.03 billion US dollars by 2031, with a compound annual growth rate (CAGR) of 2.37%.

The Power Semiconductor Devices Technology and Applications Innovation Forum will convene industry experts, corporate elites, and researchers to focus on the cutting-edge of power semiconductors. During the forum, discussions will center on the R&D of new power devices and material innovation (such as the application of wide-bandgap materials like silicon carbide and gallium nitride). It will share innovative application cases in various fields, explore ways to break through technical bottlenecks, enhance device performance and reliability, promote in-depth integration of industry, academia, research, and application, inject new impetus into the technological innovation and industrial development of power semiconductor devices, and drive the industry to new heights.